公开(公告)号：US20240222142A1

公开(公告)日：2024-07-04

申请号：US18089632

申请日：2022-12-28

Applicant: Applied Materials, Inc.

Inventor： Tapash CHAKRABORTY ,  Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Kyuil CHO ,  Kent ZHAO ,  Gopi Chandran RAMACHANDRAN

IPC: H01L21/48 ,  H01L23/538 ,  H10B80/00

CPC classification number: H01L21/486 ,  H01L23/5384 ,  H01L23/5389 ,  H10B80/00

Abstract: Semiconductor packages and methods for metallization of non-conducting surfaces for fabricating semiconductor packages are provided. In an embodiment, the method includes depositing an adhesion layer on a polymeric surface by an electroless deposition process. The polymeric surface defines a sidewall of a through-hole via and the adhesion layer comprises a cobalt alloy or a nickel alloy. The method further includes depositing a copper seed layer on the adhesion layer by an immersion plating process. The copper seed layer displaces a portion of the adhesion layer. The method further includes filling the through-hole via with a copper containing layer.

公开(公告)号：US20180163317A1

公开(公告)日：2018-06-14

申请号：US15835067

申请日：2017-12-07

Applicant: Applied Materials, Inc.

Inventor： Balaji GANAPATHY ,  Ankur KADAM ,  Prerna S. GORADIA ,  Laksheswar KALITA ,  Tapash CHAKRABORTY ,  Vijay Bhan SHARMA

IPC: C25D5/44 ,  C25D3/44 ,  C25D5/18 ,  C25D7/00

CPC classification number: C25D5/44 ,  C25D3/44 ,  C25D5/022 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D7/00 ,  C25D9/08 ,  C25D11/04

Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20180053659A1

公开(公告)日：2018-02-22

申请号：US15552754

申请日：2016-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash CHAKRABORTY ,  Prerna GORADIA ,  Robert Jan VISSER

IPC: H01L21/285 ,  C23C16/24 ,  C30B25/16 ,  C23C16/30 ,  C23C16/455 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02

CPC classification number: H01L21/28518 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/505 ,  C23C16/56 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  H01L21/0262 ,  H01L21/02636

Abstract: Methods for selective dielectric deposition using self-assembled monolayer (SAM) are provided herein. A method of selectively depositing a low-k dielectric layer atop a substrate having an exposed silicon surface and an exposed silicon-containing surface, includes: (a) growing an organosilane based self-assembled monolayer atop the exposed silicon-containing surface, wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius; and (b) selectively depositing a low-k dielectric layer atop the exposed silicon surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the low-k dielectric layer atop the silicon-containing surface.

公开(公告)号：US20250038137A1

公开(公告)日：2025-01-30

申请号：US18225286

申请日：2023-07-24

Applicant: Applied Materials, Inc.

Inventor： Prayudi LIANTO ,  Marvin Louis BERNT ,  Tapash CHAKRABORTY ,  Yin Wei LIM ,  Jing XU

IPC: H01L23/00

Abstract: A method for depositing copper onto a substrate includes grain engineering to control the internal structure of the copper. In some embodiments, the method comprises depositing a grain control layer conformally onto a copper seed layer in a structure on the substrate where the grain control layer is a non-conducting material, etching the grain control layer using a direct deep reactive ion etch (DRIE) process to remove portions of the grain control layer on horizontal surfaces within the structure, and depositing a copper material onto the structure such that at least one grain parameter of the copper material is controlled, at least in part, by a remaining portion of the grain control layer on vertical surfaces of the structure. In some embodiments, the deposited copper material in the structure has a grain orientation normal to a horizontal surface of the structure.

公开(公告)号：US20220375787A1

公开(公告)日：2022-11-24

申请号：US17323381

申请日：2021-05-18

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng LEI ,  Kurtis LESCHKIES ,  Roman GOUK ,  Giback PARK ,  Kyuil CHO ,  Tapash CHAKRABORTY ,  Han-Wen CHEN ,  Steven VERHAVERBEKE

IPC: H01L21/768 ,  H01L21/48

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

公开(公告)号：US20160247994A1

公开(公告)日：2016-08-25

申请号：US14852125

申请日：2015-09-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao ARNEPALLI ,  Tapash CHAKRABORTY ,  Robert Jan VISSER

IPC: H01L35/24 ,  H01L35/34 ,  C07F11/00

CPC classification number: H01L35/24 ,  C07F11/00 ,  H01L35/34

Abstract: Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.

Abstract translation: 本文提供单源前体，合成单源前体的方法和使用单一源前体沉积纳米线基薄膜的方法来实现高效热电器件。 在一些实施方案中，形成单一源前体的方法包括将第一化合物与SbX 3，SbX 5，Sb 2（SO 4）3或BiX 3，Bi（NO 3）3，Bi（OTf）3，Bi（PO 4） ），Bi（OAc）3，其中第一化合物是硒酸锂，锂锂，单硒化物或单碲化物之一。