公开(公告)号：US20220310424A1

公开(公告)日：2022-09-29

申请号：US17212862

申请日：2021-03-25

Applicant: Applied Materials, Inc.

Inventor： Manoj A. GAJENDRA ,  Mahadev JOSHI ,  Joseph Antony JONATHAN ,  Jamie S. LEIGHTON

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/02 ,  H01L21/66 ,  H01L21/687 ,  B08B3/02 ,  B08B5/02 ,  B08B13/00 ,  B24B37/34 ,  B24B37/013

Abstract: A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.