公开(公告)号：US20170125244A1

公开(公告)日：2017-05-04

申请号：US14926494

申请日：2015-10-29

Applicant: Applied Materials, Inc.

Inventor： Ramakrishnan BASHYAM ,  Kazuyoshi IWAMA ,  Peichun LV ,  Carlos CABALLERO ,  Taisen KAWAHIRO

IPC: H01L21/02

CPC classification number: H01L21/76877 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76879

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.