公开(公告)号：US20170125244A1

公开(公告)日：2017-05-04

申请号：US14926494

申请日：2015-10-29

Applicant: Applied Materials, Inc.

Inventor： Ramakrishnan BASHYAM ,  Kazuyoshi IWAMA ,  Peichun LV ,  Carlos CABALLERO ,  Taisen KAWAHIRO

IPC: H01L21/02

CPC classification number: H01L21/76877 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76879

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.

公开(公告)号：US20160282886A1

公开(公告)日：2016-09-29

申请号：US14722327

申请日：2015-05-27

Applicant: Applied Materials, Inc.

Inventor： Jamie Stuart LEIGHTON ,  Carlos CABALLERO ,  Shin KITAMURA ,  Thomas ACKERMAN ,  Mark AUZENNE ,  Vivek VINIT

IPC: G05D23/19 ,  G05B11/42

CPC classification number: G05D23/1919 ,  G05D23/27

Abstract: A method and apparatus for controlling the temperature in a processing chamber for semiconductor processing is disclosed herein. In one embodiment, a processing chamber for semiconductor processing is provided. The processing chamber includes a chamber body and a temperature control system. The temperature control system includes a temperature sensor configured to measure a temperature in an upper dome of the processing chamber, a blower, and a controller configured to control the temperature control system. The temperature control system is configured to carry out the method provided herein for controlling the temperature in a processing chamber.

Abstract translation: 本文公开了一种用于控制用于半导体处理的处理室中的温度的方法和装置。 在一个实施例中，提供了一种用于半导体处理的处理室。 处理室包括室主体和温度控制系统。 温度控制系统包括温度传感器，其被配置为测量处理室的上部圆顶中的温度，鼓风机和被配置为控制温度控制系统的控制器。 温度控制系统被配置为执行本文提供的用于控制处理室中的温度的方法。

公开(公告)号：US20220238674A1

公开(公告)日：2022-07-28

申请号：US17155662

申请日：2021-01-22

Applicant: Applied Materials, Inc.

Inventor： Qintao ZHANG ,  Samphy HONG ,  Lei ZHONG ,  David Jon LEE ,  Felix LEVITOV ,  Carlos CABALLERO ,  Durgaprasad CHATURVEDULA

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.