公开(公告)号：USD941372S1

公开(公告)日：2022-01-18

申请号：US29728821

申请日：2020-03-20

Applicant: APPLIED MATERIALS, INC.

Designer： Ilya Lavitsky ,  Keith A Miller ,  Goichi Yoshidome

公开(公告)号：USD941371S1

公开(公告)日：2022-01-18

申请号：US29728820

申请日：2020-03-20

Applicant: APPLIED MATERIALS, INC.

Designer： Ilya Lavitsky ,  Keith A Miller ,  Goichi Yoshidome

公开(公告)号：US11898236B2

公开(公告)日：2024-02-13

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Wang ,  Halbert Chong ,  John C. Forster ,  Irena H. Wysok ,  Tiefeng Shi ,  Gang Fu ,  Renu Whig ,  Keith A Miller ,  Sundarapandian Ramalinga Vijayalakshmi Reddy ,  Jianxin Lei ,  Rongjun Wang ,  Tza-Jing Gung ,  Kirankumar Neelasandra Savandaiah ,  Avinash Nayak ,  Lei Zhou

IPC: C23C14/34 ,  H01J37/32 ,  C23C14/50

CPC classification number: C23C14/345 ,  C23C14/3485 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  C23C14/50

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：USD934315S1

公开(公告)日：2021-10-26

申请号：US29728822

申请日：2020-03-20

Applicant: APPLIED MATERIALS, INC.

Designer： Ilya Lavitsky ,  Keith A Miller ,  Goichi Yoshidome

公开(公告)号：US11339466B2

公开(公告)日：2022-05-24

申请号：US16826121

申请日：2020-03-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Ilya Lavitsky ,  Keith A Miller ,  Goichi Yoshidome

IPC: C23C14/34 ,  C23C14/50

Abstract: Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.

公开(公告)号：US20210292888A1

公开(公告)日：2021-09-23

申请号：US16826121

申请日：2020-03-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Ilya Lavitsky ,  Keith A Miller ,  GOICHI Yoshidome

IPC: C23C14/34 ,  C23C14/50

Abstract: Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.