公开(公告)号：US20170125241A1

公开(公告)日：2017-05-04

申请号：US15074038

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Kang Sub YIM ,  Deenesh PADHI ,  Kevin M. CHO ,  Khoi Anh PHAN ,  Chien-An CHEN ,  Priyanka DASH

IPC: H01L21/02 ,  H01L21/32

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.