公开(公告)号：US20170125241A1

公开(公告)日：2017-05-04

申请号：US15074038

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Kang Sub YIM ,  Deenesh PADHI ,  Kevin M. CHO ,  Khoi Anh PHAN ,  Chien-An CHEN ,  Priyanka DASH

IPC: H01L21/02 ,  H01L21/32

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.

公开(公告)号：US20160020090A1

公开(公告)日：2016-01-21

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Mahendra CHHABRA ,  Kelvin CHAN ,  Alexandros T. DEMOS ,  Priyanka DASH

IPC: H01L21/02

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

Abstract translation: 本文描述的实施方案一般涉及用UV能量处理衬底上的电介质膜的方法。 在一个实施方案中，前体膜沉积在基底上，并且前体膜包括多个致孔剂分子。 首先在第一温度下将前体膜暴露于UV能以引发交联过程。 在第一预定时间之后，将前体膜的温度升至第二温度第二预定时间以除去致孔剂分子并继续进行交联过程。 所得膜是具有改善的弹性模量和硬度的多孔低k电介质膜。

公开(公告)号：US20200098547A1

公开(公告)日：2020-03-26

申请号：US16583003

申请日：2019-09-25

Applicant: Applied Materials, Inc.

Inventor： Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kalyanjit GHOSH ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: Systems and methods for a process chamber that decreases the severity and occurrence of substrate defects due to loosened scale is discussed herein. A gas distribution assembly is disposed in a process chamber and includes a faceplate with a plurality of apertures formed therethrough and a second member. The faceplate is coupled to the second member which is configured to couple to the faceplate to reduce an exposed area of the faceplate and minimize an available area for material buildup during the release of gas into the process chamber. The second member is further configured to improve the glow of precursors into the process chamber. The gas distribution assembly can be heated before and during process chamber operations, and can remain heated between process chamber operations.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20160379819A1

公开(公告)日：2016-12-29

申请号：US14750778

申请日：2015-06-25

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Mehul B. NAIK ,  Deenesh PADHI ,  Priyanka DASH ,  Bhaskar KUMAR ,  Alexandros T. DEMOS

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

Abstract translation: 提供了一种用于密封多孔低k电介质膜的方法。 该方法包括将衬底暴露于UV辐射和第一反应气体，其中衬底具有限定在其中的开放特征，由多孔低k电介质层和导电材料限定的开放特征，其中多孔低k电介质层 是含硅和碳的材料，并使用UV辅助光化学气相沉积在多孔低k电介质层的暴露表面上的开放特征中选择性地形成孔密封层。