公开(公告)号：US20250079312A1

公开(公告)日：2025-03-06

申请号：US18460154

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan ,  Kun Li

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00

Abstract: A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface of the structure can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. For example, the dielectric constant of the dielectric film can be about or greater than 7 or 8. A semiconductor device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A dielectric film-oxide-metal-substrate structure can be formed with the dielectric film on the top surface of the stack. A multi-material etch can be used etch features in the dielectric film and the oxide in a dielectric film-oxide-metal-substrate stack. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.

公开(公告)号：US20250079357A1

公开(公告)日：2025-03-06

申请号：US18460189

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan ,  Maria Gorchichko ,  Kun Li

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/67

Abstract: A first structure for semiconductor devices having a dielectric film on the top surface can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The top surface of the dielectric film of the first structure can be hybrid bonded to a dielectric layer of a second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be different dielectrics. In this way, the hybrid bonding of the two structures includes the hybrid bonding of asymmetric dielectrics.