公开(公告)号：US20250113718A1

公开(公告)日：2025-04-03

申请号：US18907141

申请日：2024-10-04

Applicant: Applied Materials, Inc.

Inventor： Wenhui LI ,  Kevin CHEN ,  Wen-Hao WU ,  Yu-Min WANG ,  Zongkai WU ,  Kwang Soo HUH ,  Lai ZHAO

IPC: H10K59/80 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments described herein relate to an optical device and methods of forming an optical device. The optical device includes a substrate, an illumination source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.

公开(公告)号：US20230077652A1

公开(公告)日：2023-03-16

申请号：US17903847

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Milan SIRY ,  Michael LIANG ,  Jeffrey A. KHO ,  Kwang Soo HUH

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/56

Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas. The gas flow inlet guide having a flow guide bottom plate having an opening. A top plate is disposed over the flow guide bottom plate and a plasma blocker is disposed over the opening. The plasma blocker includes one or more apertures sized based one or more of a plasma density, an electron temperature, an ion temperature, or a characteristic of a process gas.