公开(公告)号：US20250008823A1

公开(公告)日：2025-01-02

申请号：US18594527

申请日：2024-03-04

Applicant: Applied Materials, Inc.

Inventor： Zongkai WU ,  Pei Chia CHEN ,  Wen-Hao WU ,  Jungmin LEE ,  Chung-chia CHEN ,  Yu-Hsin LIN ,  Kevin CHEN ,  Wenhui LI ,  Yu-Min WANG ,  Lai ZHAO ,  Soo Young CHOI

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/122

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display, such as an organic light-emitting diode (OLED) display, are provided. In one example, a sub-pixel includes a substrate, adjacent overhang structures, an anode, an OLED material, a cathode, an encapsulation layer stack. The encapsulation layer stack includes a first layer, a second layer disposed over the first layer, and a third layer. The first layer and the second layer have a first portion disposed over the cathode, a second portion disposed over a sidewall of each overhang structure, and a third portion disposed under an underside surface of an extension of each overhang structure. A gap is defined by contact of the first portion of the second layer and the third portion of the second layer. The third layer is disposed over the second layer outside of the gap.

公开(公告)号：US20250113718A1

公开(公告)日：2025-04-03

申请号：US18907141

申请日：2024-10-04

Applicant: Applied Materials, Inc.

Inventor： Wenhui LI ,  Kevin CHEN ,  Wen-Hao WU ,  Yu-Min WANG ,  Zongkai WU ,  Kwang Soo HUH ,  Lai ZHAO

IPC: H10K59/80 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments described herein relate to an optical device and methods of forming an optical device. The optical device includes a substrate, an illumination source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.