公开(公告)号：US20240047291A1

公开(公告)日：2024-02-08

申请号：US17641365

申请日：2019-09-10

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Dong Kil YIM ,  Young Dong LEE ,  Zongkai WU ,  Sanjay D. YADAV

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/56 ,  H01L21/02 ,  H01L33/00 ,  H01L33/56 ,  H01L21/285

CPC classification number: H01L23/3192 ,  H01L23/291 ,  H01L21/56 ,  H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0214 ,  H01L33/0095 ,  H01L33/56 ,  H01L21/285

Abstract: Embodiments of the present disclosure generally relate to moisture barrier films utilized in an organic light emitting diode device. A moisture barrier film is deposited in a high density plasma chemical vapor deposition chamber at a temperature of less than about 250 degrees Celsius, an inductively coupled plasma power frequency of about 2 MHz to about 13.56 MHz or a microwave power frequency of about 2.45 GHz, and a plasma density of about 1011 cm3 to about 1012 cm3. The moisture barrier film comprises a material selected from the group consisting of silicon oxynitride, silicon nitride, and silicon oxide. The moisture barrier film has a thickness of less than about 3,000 Angstroms, a refractive index between about 1.45 and 1.95, and an absorption coefficient of about zero at UV wavelengths. The moisture barrier film may be utilized in a thin film encapsulation structure or a thin film transistor.

公开(公告)号：US20250008823A1

公开(公告)日：2025-01-02

申请号：US18594527

申请日：2024-03-04

Applicant: Applied Materials, Inc.

Inventor： Zongkai WU ,  Pei Chia CHEN ,  Wen-Hao WU ,  Jungmin LEE ,  Chung-chia CHEN ,  Yu-Hsin LIN ,  Kevin CHEN ,  Wenhui LI ,  Yu-Min WANG ,  Lai ZHAO ,  Soo Young CHOI

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/122

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display, such as an organic light-emitting diode (OLED) display, are provided. In one example, a sub-pixel includes a substrate, adjacent overhang structures, an anode, an OLED material, a cathode, an encapsulation layer stack. The encapsulation layer stack includes a first layer, a second layer disposed over the first layer, and a third layer. The first layer and the second layer have a first portion disposed over the cathode, a second portion disposed over a sidewall of each overhang structure, and a third portion disposed under an underside surface of an extension of each overhang structure. A gap is defined by contact of the first portion of the second layer and the third portion of the second layer. The third layer is disposed over the second layer outside of the gap.

公开(公告)号：US20250113718A1

公开(公告)日：2025-04-03

申请号：US18907141

申请日：2024-10-04

Applicant: Applied Materials, Inc.

Inventor： Wenhui LI ,  Kevin CHEN ,  Wen-Hao WU ,  Yu-Min WANG ,  Zongkai WU ,  Kwang Soo HUH ,  Lai ZHAO

IPC: H10K59/80 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments described herein relate to an optical device and methods of forming an optical device. The optical device includes a substrate, an illumination source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.