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公开(公告)号：US20240247405A1
公开(公告)日：2024-07-25
申请号：US18100978
申请日：2023-01-24
Applicant: Applied Materials, Inc.
Inventor： Alexandros ANASTASOPOULOS , Zuoming ZHU , Maribel MALDONADO-GARCIA , Thomas KIRSCHENHEITER , Flora Fong-Song CHANG
Abstract: A method for substrate processing includes flowing one or more process reactive gases into an upper volume of a processing chamber, flowing cleaning gas into a lower volume of the processing chamber, measuring temperature of an inner surface of the lower volume of the processing chamber, and adjusting temperature of the inner surface of the lower volume of the processing chamber, based on the measured temperature.
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公开(公告)号：US20240038531A1
公开(公告)日：2024-02-01
申请号：US18098547
申请日：2023-01-18
Applicant: Applied Materials, Inc.
Inventor： Thomas KIRSCHENHEITER , John TOLLE , Abhishek DUBE , Maribel MALDONADO-GARCIA
IPC: H01L21/02 , H01L21/304 , H10B12/00
CPC classification number: H01L21/02532 , H01L21/02507 , H01L21/0245 , H01L21/0206 , H01L21/02381 , H01L21/0262 , H01L21/304 , H10B12/02 , H10B12/30
Abstract: A method and apparatus for forming strain relaxed buffers that may be used in semiconductor devices incorporating superlattice structures are provided. The method includes epitaxially depositing a first silicon germanium layer over the substrate. The first silicon germanium layer has a first surface that contacts a frontside surface of the substrate and a second surface opposite the first surface. The first silicon germanium layer has a first thickness and a germanium concentration gradient that increases from the first surface to the second surface. The method further includes epitaxially depositing a silicon germanium capping layer on the first silicon germanium layer. The silicon germanium capping layer has a second thickness and a substantially uniform germanium concentration that is equal to, substantially equal to, or greater than a maximum germanium concentration of the germanium concentration gradient.
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