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公开(公告)号:US20220384165A1
公开(公告)日:2022-12-01
申请号:US17333732
申请日:2021-05-28
Applicant: Applied Materials, Inc.
Inventor: Mengxue WU , Siew Kit HOI , Jay Min SOH , Yue CUI , Chul Nyoung LEE , Palaniappan CHIDAMBARAM , Jiao SONG
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.
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公开(公告)号:US20220380883A1
公开(公告)日:2022-12-01
申请号:US17329796
申请日:2021-05-25
Applicant: Applied Materials, Inc.
Inventor: Mengxue WU , Siew Kit HOI , Jay Min SOH
Abstract: Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.
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