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公开(公告)号：US20220406573A1
公开(公告)日：2022-12-22
申请号：US17351535
申请日：2021-06-18
Applicant: Applied Materials, Inc.
Inventor： David GUNTHER , Siew Kit HOI , Kirankumar Neelasandra SAVANDAIAH
Abstract: Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.
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公开(公告)号：US20210189545A1
公开(公告)日：2021-06-24
申请号：US15930636
申请日：2020-05-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Siew Kit HOI , Yaoying ZHONG , Xinxin WANG , Zheng Min Clarence CHONG
Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.
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公开(公告)号：US20250101575A1
公开(公告)日：2025-03-27
申请号：US18371708
申请日：2023-09-22
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI , Haomin XU , Li Ying CHOO , Xiao TAN , Jay Min SOH
Abstract: A method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. A method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form Ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an AC bias on the substrate to increase the Ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.
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公开(公告)号：US20240222093A1
公开(公告)日：2024-07-04
申请号：US18093138
申请日：2023-01-04
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI , Bridger Earl HOERNER
CPC classification number: H01J37/32724 , C23C14/14 , C23C14/34 , C23C14/50 , C23C14/54 , H01J2237/002 , H01J2237/2007 , H01J2237/24585 , H01J2237/332
Abstract: Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.
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公开(公告)号：US20220384165A1
公开(公告)日：2022-12-01
申请号：US17333732
申请日：2021-05-28
Applicant: Applied Materials, Inc.
Inventor： Mengxue WU , Siew Kit HOI , Jay Min SOH , Yue CUI , Chul Nyoung LEE , Palaniappan CHIDAMBARAM , Jiao SONG
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.
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Patent Agency Ranking
公开(公告)号：US20220139706A1
公开(公告)日：2022-05-05
申请号：US17086555
申请日：2020-11-02
Applicant: APPLIED MATERIALS, INC.
Inventor： Yaoying ZHONG , Siew Kit HOI , Zicheng JIANG
IPC: H01L21/02 , C23C16/503 , C23C16/505 , C23C16/455 , C23C16/52 , H01L21/67
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a first gas at a first flow rate to a substrate support disposed within an interior volume of a deposition chamber and at a second flow rate into the interior volume of the deposition chamber; decreasing the first flow rate of the first gas to a third flow rate; supplying DC power or DC power and an AC power for inducing an AC bias therebetween; supplying a second gas into the deposition chamber in a switching mode while supplying the first gas at the second flow rate and the third flow rate and increasing at least one of the DC power or AC power to increase the AC bias; and while supplying the second gas in the switching mode, depositing material from the target onto a substrate to form a barrier layer.
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公开(公告)号：US20240222198A1
公开(公告)日：2024-07-04
申请号：US18093139
申请日：2023-01-04
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI , Bridger Earl HOERNER
IPC: H01L21/66 , H01L21/285
CPC classification number: H01L22/12 , H01L21/2855 , H01L22/26
Abstract: Methods and apparatus for controlling substrate temperature includes: measuring a substrate that has undergone a deposition process; analyzing measurements of the substrate to detect a defect of the substrate; and sending a feedback signal to modify a temperature control parameter of a temperature controller used in controlling a temperature of the substrate in the deposition process based on the analyzing if a defect is detected, and not sending a feedback signal to modify the temperature control parameter if a defect is not detected.
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公开(公告)号：US20240218499A1
公开(公告)日：2024-07-04
申请号：US18093141
申请日：2023-01-04
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI , Bridger Earl HOERNER
CPC classification number: C23C14/541 , C23C14/14 , C23C14/34 , C23C14/50 , G05D23/1931
Abstract: Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.
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公开(公告)号：US20240038557A1
公开(公告)日：2024-02-01
申请号：US17875740
申请日：2022-07-28
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI
IPC: H01L21/67
CPC classification number: H01L21/67288 , H01L21/67248 , H01L21/67259
Abstract: Methods and apparatus for processing a substrate is provided herein. For example, the method comprises prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate, in a process chamber processing the substrate in a presence of an electric field, subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate, and determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement.
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公开(公告)号：US20230416906A1
公开(公告)日：2023-12-28
申请号：US17851620
申请日：2022-06-28
Applicant: Applied Materials, Inc.
Inventor： Yaoying ZHONG , Siew Kit HOI , John KLOCKE , Bridger Earl HOERNER
CPC classification number: C23C14/54 , C23C16/52 , H01L22/12 , G06T7/0008 , G06T2207/30148
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method comprises in a process chamber, processing a substrate in a presence of an electric field, subsequently capturing an image of the substrate, determining whether substrate arcing occurred based upon analysis of the captured image, and one of continuing processing of the substrate when no arcing is determined or stopping processing of the substrate when arcing is determined.
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