公开(公告)号：US20140120700A1

公开(公告)日：2014-05-01

申请号：US14068301

申请日：2013-10-31

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. WANG ,  Joshua COLLINS ,  Michael JACKSON ,  Avgerinos V. GELATOS ,  Amit KHANDELWAL

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

Abstract translation: 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷以在基材的表面区域上的特征中产生选择性成核。