公开(公告)号：US20250118557A1

公开(公告)日：2025-04-10

申请号：US18481904

申请日：2023-10-05

Applicant: Applied Materials, Inc.

Inventor： Sonam Dorje Sherpa ,  Mir Abdulla Al Galib ,  Alok Ranjan ,  Kenji Takeshita

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311

Abstract: Methods of semiconductor processing may include forming plasma effluents of a hydrogen-and-fluorine-containing precursor. The plasma effluents may then contact a silicon-containing hardmask material and a photoresist material. The silicon-containing hardmask material can overlay an organic material overlaying a substrate in a processing region of a semiconductor processing chamber. Etching the silicon-containing hardmask material with the plasma effluents while the photoresist material with the plasma effluents. The silicon-containing hardmask material can be etched at a selectivity greater than or about 10 relative to the photoresist material. A temperature in the processing region can be maintained at about −20° C. or less.

公开(公告)号：US20250118570A1

公开(公告)日：2025-04-10

申请号：US18482384

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Mir Abdulla Al Galib ,  Sonam Dorje Sherpa ,  Kenji Takeshita ,  Alok Ranjan

IPC: H01L21/311 ,  H01L21/033

Abstract: Methods of semiconductor processing may include forming plasma effluents. The plasma effluents may then contact a carbon-containing hardmask and an oxide cap. The plasma effluents can etch one or more features in the oxide cap through one or more apertures of the carbon-containing hardmask. Etching can create a tapered profile for one or more features in the oxide cap. The one or more features can be characterized by a critical dimension at the bottom of the one or more features. The critical dimension can be less than or about 80% of a width of the one or more apertures.

公开(公告)号：US10586696B2

公开(公告)日：2020-03-10

申请号：US15976519

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Yongjia Li ,  Mir Abdulla Al Galib ,  Minoru Takahashi ,  Masato Ito ,  Jinhan Choi

IPC: H01L21/02 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/1157 ,  H01L27/11524

Abstract: In an embodiment, a method of processing a substrate includes introducing a first process gas or a mixture of the first process gas and a second process gas into an etch chamber; exposing the substrate to the first process gas or to the mixture of the first and second process gases, the substrate having halogen residue formed on an exposed surface, the substrate having high aspect ratio features; forming and maintaining a plasma of the first process gas or a plasma of the mixture of the first and second process gases in the etch chamber to remove the residue from the surface by applying a first source power; exposing the substrate to the second process gas; and forming and maintaining a plasma of the second process gas in the etch chamber to remove the residue from the surface by applying a second source power and a bias power.