公开(公告)号：US11333246B2

公开(公告)日：2022-05-17

申请号：US14693254

申请日：2015-04-22

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Bradley J. Howard ,  Nicolas J. Bright

IPC: F16J10/02 ,  H01J37/32

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

公开(公告)号：US12266506B2

公开(公告)日：2025-04-01

申请号：US17930139

申请日：2022-09-07

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Kartik Ramaswamy ,  Nicolas J. Bright ,  Yang Yang ,  A N M Wasekul Azad

IPC: H01J37/32 ,  G01R27/02 ,  H01L21/66

Abstract: Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is delivered to the electrode assembly. The method includes receiving, by the RF match, a synchronization signal from a RF generator or the waveform generator, measuring, by an output sensor of the RF match, a first set of impedance related data of the plasma processing system over a first time period, the first time period beginning after a first delay triggered by a first portion of a first waveform pulse of the synchronization signal, measuring, by the output sensor of the RF match, a second set of impedance related data of the plasma processing system over a second time period, the second time period beginning after a second delay triggered by the first portion of the first waveform pulse of the synchronization signal, calculating, by the RF match, a combined impedance parameter based on the measured first set of impedance related data and the measured second set of impedance related data, and adjusting a matching parameter within the RF match based on the calculated combined impedance parameter to achieve a second matching point.

公开(公告)号：US12293897B2

公开(公告)日：2025-05-06

申请号：US18115537

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Yue Guo ,  A N M Wasekul Azad ,  Yang Yang ,  Nicolas J. Bright

IPC: H01J37/32

Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

公开(公告)号：US12049961B2

公开(公告)日：2024-07-30

申请号：US17656030

申请日：2022-03-23

Applicant: Applied Materials, Inc.

Inventor： Bradley J. Howard ,  Nicolas J. Bright ,  Andrew Nguyen

IPC: F16J10/02 ,  H01J37/32

CPC classification number: F16J10/02 ,  H01J37/32834 ,  H01J37/32899

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

公开(公告)号：US20230187176A1

公开(公告)日：2023-06-15

申请号：US17551698

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Kostiantyn Achkasov ,  Nicolas J. Bright ,  Fernando M. Silveira ,  Yang Yang ,  Yue Guo

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/32091 ,  H01J37/321

Abstract: A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.