公开(公告)号：US20240035151A1

公开(公告)日：2024-02-01

申请号：US18222587

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar ,  Mohith Verghese ,  Jose Alexandro Romero ,  Aniruddh Shekhawat

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/40

CPC classification number: C23C16/06 ,  C23C16/045 ,  C23C16/40

Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.

公开(公告)号：US20240074162A1

公开(公告)日：2024-02-29

申请号：US17898796

申请日：2022-08-30

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar

IPC: H01L27/108 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/10891 ,  H01L21/28568 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal nitride layer comprising lanthanum nitride (LaN) and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal nitride layer.

公开(公告)号：US20240035149A1

公开(公告)日：2024-02-01

申请号：US17877310

申请日：2022-07-29

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/56 ,  H01L27/108

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/56 ,  H01L27/10847

Abstract: Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.