公开(公告)号：US20240047215A1

公开(公告)日：2024-02-08

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/4408 ,  C23C16/45553 ,  C23C16/14

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US11859281B2

公开(公告)日：2024-01-02

申请号：US18145553

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

CPC classification number: C23C16/4481 ,  H01L21/67017

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20210340674A1

公开(公告)日：2021-11-04

申请号：US16864877

申请日：2020-05-01

Applicant: Applied Materials, Inc.

Inventor： Jereld Winkler ,  Mohith Verghese

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01L21/66 ,  H01L21/02

Abstract: Describe is a quartz crystal microbalance (QCM) device mounted within a heated sample chamber. The sample chamber temperature is maintained about 10° C. to about 30° C. greater than the temperature of the precursor vessel. The sample chamber is connected to the precursor delivery line and includes a high temperature valve and a flow pathway to foreline with a high temperature valve to permit removal of excess material. The QCM device includes a heater and gas cooling channel allowing the device to be maintained at a temperature about 10° C. to about 30° C. less than the temperature of the precursor vessel.

公开(公告)号：US20240060175A1

公开(公告)日：2024-02-22

申请号：US17891753

申请日：2022-08-19

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Yong Yang ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Kunal Bhatnagar ,  Mohith Verghese

IPC: C23C16/06 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/06 ,  H01L21/28556 ,  C23C16/45553

Abstract: Embodiments of the disclosure provide conformally deposited molybdenum films having reduced resistivity and methods of forming the same. The methods include forming a nucleation layer directly on a dielectric layer on a substrate surface by exposing the substrate surface to a molybdenum-containing precursor and a nucleation reactant, and conformally depositing a molybdenum film on the nucleation layer. Another aspect of the disclosure pertains to a method that is part of a gap fill process, comprising forming a nucleation layer directly on a dielectric region within one or more high aspect ratio gap features, including vertical gap features and/or horizontal gap features, and conformally depositing a molybdenum film on the nucleation layer to fill the feature.

公开(公告)号：US11773485B2

公开(公告)日：2023-10-03

申请号：US18095053

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/4402

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US12080558B2

公开(公告)日：2024-09-03

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US11854813B2

公开(公告)日：2023-12-26

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US20230178375A1

公开(公告)日：2023-06-08

申请号：US17541582

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Wei Liu ,  Shashank Sharma ,  Archana Kumar ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/3215

CPC classification number: H01L21/28088 ,  H01L21/3215 ,  H01L21/28556 ,  H01L29/401 ,  H01L29/4966

Abstract: Method of forming film stacks and film stacks for electronic devices are described herein. The methods comprise depositing a molybdenum nucleation layer on a gate oxide layer; depositing a molybdenum layer on the molybdenum nucleation layer; and performing a plasma nitridation process to insert nitrogen atoms into the molybdenum layer to form a work function modulating layer having an effective work function ≤ 4.5 eV. The plasma nitridation process comprises exposing the molybdenum layer to a radical-rich plasma comprising one or more of N2 or NH3. Some methods further comprise one or more of annealing the work function modulating layer, depositing a conductive layer on the work function modulating layer, or performing an etch process.

公开(公告)号：US20230160064A1

公开(公告)日：2023-05-25

申请号：US18095053

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/448 ,  C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/4402

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20230126780A1

公开(公告)日：2023-04-27

申请号：US18145553

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.