公开(公告)号：US20130320505A1

公开(公告)日：2013-12-05

申请号：US13801860

申请日：2013-03-13

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Robert C. Linke

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/321 ,  H01L21/76898

Abstract: A method for at least partially filling a feature on a workpiece includes obtaining a workpiece including a feature having a high aspect ratio in the range of about 10 to about 80, depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.

Abstract translation: 用于至少部分地填充工件上的特征的方法包括获得包括具有在约10至约80范围内的高纵横比的特征的工件，在特征中沉积第一共形导电层，并将工件热处理为 回流特征中的第一保形导电层。

公开(公告)号：US09245798B2

公开(公告)日：2016-01-26

申请号：US13801860

申请日：2013-03-13

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Robert C. Linke

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/321

CPC classification number: H01L21/76882 ,  H01L21/321 ,  H01L21/76898

Abstract: A method for at least partially filling a feature on a workpiece includes obtaining a workpiece including a feature having a high aspect ratio in the range of about 10 to about 80, depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.

Abstract translation: 用于至少部分地填充工件上的特征的方法包括获得包括具有在约10至约80范围内的高纵横比的特征的工件，在特征中沉积第一共形导电层，并将工件热处理为 回流特征中的第一保形导电层。

公开(公告)号：US20240141492A1

公开(公告)日：2024-05-02

申请号：US18125215

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Prasanth Narayanan ,  Vijayabhaskara Venkatagiriyappa ,  Keiichi Tanaka ,  Ning Li ,  Robert B. Moore ,  Robert C. Linke ,  Mandyam Sriram ,  Mario D. Silvetti ,  Michael Racine ,  Tae Kwang Lee

IPC: C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4583

Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.