公开(公告)号：US20220193858A1

公开(公告)日：2022-06-23

申请号：US17554596

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Sameer DESHPANDE ,  Sidney P. HUEY ,  Derek R. WITTY

IPC: B24B37/04 ,  B24B37/013 ,  B24B49/12 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/66 ,  G06N20/00 ,  G06K9/62

Abstract: Provided herein are advanced substrate polishing methods that use a machine-learning artificial intelligence (AI) algorithm, or a software application generated using the AI, to control one or more aspects of the polishing process. The AI algorithm is trained to simulate a polishing process and to make predictions about the polishing process and process results expected therefrom, using substrate processing data acquired from a polishing system.

公开(公告)号：US20220184771A1

公开(公告)日：2022-06-16

申请号：US17121467

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Asheesh JAIN ,  Sameer DESHPANDE

IPC: B24B37/04 ,  B24B57/02

Abstract: Embodiments herein include carrier loading stations and methods related thereto which may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related defectivity associated therewith.