公开(公告)号：US20220193858A1

公开(公告)日：2022-06-23

申请号：US17554596

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Sameer DESHPANDE ,  Sidney P. HUEY ,  Derek R. WITTY

IPC: B24B37/04 ,  B24B37/013 ,  B24B49/12 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/66 ,  G06N20/00 ,  G06K9/62

Abstract: Provided herein are advanced substrate polishing methods that use a machine-learning artificial intelligence (AI) algorithm, or a software application generated using the AI, to control one or more aspects of the polishing process. The AI algorithm is trained to simulate a polishing process and to make predictions about the polishing process and process results expected therefrom, using substrate processing data acquired from a polishing system.

公开(公告)号：US20140273516A1

公开(公告)日：2014-09-18

申请号：US14173538

申请日：2014-02-05

Applicant: Applied Materials, Inc.

Inventor： Li-Qun XIA ,  Weifeng YE ,  Xiaojun ZHANG ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Victor NGUYEN ,  Derek R. WITTY

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

Abstract: Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在一个实施例中，该方法包括提供其上沉积有低k电介质膜的基底，并将低k电介质膜的表面暴露于含活性炭的前体气体，以在该表面上形成共形含碳膜 低k电介质膜，其中含碳前体气体在分子结构中具有至少一个或多个Si-N-Si键。

公开(公告)号：US20170170015A1

公开(公告)日：2017-06-15

申请号：US15432605

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Sungjin KIM ,  Deenesh PADHI ,  Sung Hyun HONG ,  Bok Hoen KIM ,  Derek R. WITTY

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

公开(公告)号：US20150279676A1

公开(公告)日：2015-10-01

申请号：US14736848

申请日：2015-06-11

Applicant: Applied Materials, Inc.

Inventor： Sungjin KIM ,  Deenesh PADHI ,  Sung Hyun HONG ,  Bok Hoen KIM ,  Derek R. WITTY

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。

公开(公告)号：US20170301537A1

公开(公告)日：2017-10-19

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

公开(公告)号：US20160005596A1

公开(公告)日：2016-01-07

申请号：US14770412

申请日：2014-02-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

Abstract translation: 本发明的实施方案涉及保形碳基材料的沉积。 在一个实施例中，该方法包括在衬底上沉积具有预定厚度的牺牲电介质层，通过去除牺牲电介质层的部分以暴露衬底的上表面，引入烃源，等离子体 - 引发气体和稀释气体进入处理室，其中烃源的体积流量：等离子体起始气体：稀释气体的比例为1:0.5:20，在约300℃的沉积温度下产生等离子体 C至约500℃以在图案化特征和暴露的基底的上表面上沉积共形无定形碳层，从图案化特征的上表面和基底的上表面选择性地除去无定形碳层， 图案特征。