公开(公告)号：US20210398815A1

公开(公告)日：2021-12-23

申请号：US17371176

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro GARCIA DE GORORDO ,  Zhonghua YAO ,  Sunil SRINIVASAN ,  Sang Wook PARK

IPC: H01L21/3065 ,  H01L21/02

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

公开(公告)号：US20200027717A1

公开(公告)日：2020-01-23

申请号：US16391219

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Jonathan Sungehul KIM ,  Lin YU ,  Zhonghua YAO ,  Olivier LUERE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：US20170040159A1

公开(公告)日：2017-02-09

申请号：US15230218

申请日：2016-08-05

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. KACHIAN ,  Naomi YOSHIDA ,  Mei CHANG ,  Mary EDMONDS ,  Andrew C. KUMMEL ,  Sang Wook PARK ,  Hyunwoong KIM

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02301 ,  H01L21/02304

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Abstract translation: 本文描述的实施方案提供了自限制和饱和的Si-Ox双层方法，其不需要使用等离子体或催化剂，并且不会导致不希望的底物氧化。 本公开的方法不产生SiO 2，而是产生具有-OH终止的饱和Si-Ox膜，以使底物表面对金属ALD前体具有高度反应性，以使栅极氧化物ALD材料的高成核和生长。

公开(公告)号：US20200373149A1

公开(公告)日：2020-11-26

申请号：US16831217

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Xiaorui CUI ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Zhonghua YAO ,  Lin YU ,  Olivier LUERE ,  Jonathan Sungehul KIM

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on the substrate includes pulsing a first gas precursor comprising an organic silicon compound onto a surface of the substrate. The method also includes disposing a first element from the first gas precursor onto the surface of the substrate. The method further includes maintaining a substrate temperature less than about 110 degrees Celsius while disposing the first element. A second gas precursor is pulsed onto the surface of the substrate. Additionally, the method includes disposing a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：US20180019116A1

公开(公告)日：2018-01-18

申请号：US15714162

申请日：2017-09-25

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. KACHIAN ,  Naomi YOSHIDA ,  Mei CHANG ,  Mary EDMONDS ,  Andrew C. KUMMEL ,  Sang Wook PARK ,  Hyunwoong KIM

IPC: H01L21/02

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US20230071505A1

公开(公告)日：2023-03-09

申请号：US17983560

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro GARCIA DE GORORDO ,  Zhonghua YAO ,  Sunil SRINIVASAN ,  Sang Wook PARK

IPC: H01L21/3065 ,  H01L21/02

Abstract: The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.