公开(公告)号：US20240387190A1

公开(公告)日：2024-11-21

申请号：US18197545

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Jongbeom Seo ,  Eswaranand Venkatasubramanian ,  Santhosh Kiran Rajarajan ,  Diwakar Kedlaya ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a metal-containing precursor. The silicon-containing precursor and the metal-containing precursor may be fluidly isolated prior to reaching the processing region. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US20240387174A1

公开(公告)日：2024-11-21

申请号：US18197528

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Eswaranand Venkatasubramanian ,  Rui Cheng ,  Santhosh Kiran Rajarajan ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman ,  Guoqing Li

IPC: H01L21/033

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.