公开(公告)号：US20250066913A1

公开(公告)日：2025-02-27

申请号：US18455508

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Diwakar Kedlaya ,  Priya Chouhan

IPC: C23C16/455 ,  C23C16/40 ,  H01J37/32 ,  H01L21/02

Abstract: Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.

公开(公告)号：US12062567B2

公开(公告)日：2024-08-13

申请号：US16844764

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Diwakar Kedlaya ,  Satish Radhakrishnan ,  Anton V. Baryshnikov ,  Venkatanarayana Shankaramurthy ,  Karthik Janakiraman ,  Paul L. Brillhart ,  Badri N. Ramamurthi

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6838 ,  H01J37/32724 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67253 ,  H01J2237/186 ,  H01J2237/24585

Abstract: Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

公开(公告)号：US11961739B2

公开(公告)日：2024-04-16

申请号：US17063339

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

CPC classification number: H01L21/0337 ,  C23C16/38 ,  H01L21/0332

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US11804363B2

公开(公告)日：2023-10-31

申请号：US17088834

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Mingle Tong ,  Sherry L. Mings ,  Venkata Sharat Chandra Parimi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include an inlet manifold defining a central aperture. The inlet manifold may also define a first channel and a second channel, and each of the channels may extend through the inlet manifold radially outward of the central aperture. The chambers may also include a gasbox characterized by a first surface facing the inlet manifold and a second surface opposite the first. The gasbox may define a central aperture aligned with the central aperture of the inlet manifold. The gasbox may define a first annular channel in the first surface extending about the central aperture of the gasbox and fluidly coupled with the first channel of the inlet manifold. The gasbox may define a second annular channel extending radially outward of the first and fluidly coupled with the second channel of the inlet manifold. The second annular channel may be fluidly isolated from the first.

公开(公告)号：US11798820B2

公开(公告)日：2023-10-24

申请号：US17094969

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Diwakar Kedlaya ,  Fang Ruan ,  Zubin Huang ,  Ganesh Balasubramanian ,  Kaushik Alayavalli ,  Martin Seamons ,  Kwangduk Lee ,  Rajaram Narayanan ,  Karthik Janakiraman

IPC: H01L21/67 ,  G01N21/3504 ,  G01N21/25 ,  C23C16/52

CPC classification number: H01L21/67069 ,  C23C16/52 ,  G01N21/255 ,  G01N21/3504 ,  H01L21/67253

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

公开(公告)号：US11618949B2

公开(公告)日：2023-04-04

申请号：US17087346

申请日：2020-11-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/38 ,  C23C16/455 ,  H01J37/32 ,  C23C16/30

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11562902B2

公开(公告)日：2023-01-24

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20240234167A1

公开(公告)日：2024-07-11

申请号：US18095262

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： Shashank Sharma ,  Udit Suryakant Kotagi ,  Diwakar Kedlaya ,  Mayur Govind Kulkarni ,  Rupankar Choudhury

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/67196

Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a plurality of processing regions. The systems may include at least one splitter. Each splitter may include a top surface and side surfaces. Each splitter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through a side surface. Each splitter may define an inlet lumen that extends from the fluid inlet to a hub. Each splitter may define a plurality of outlet lumens that each extend from the hub to one of the outlets. Each of the outlet lumens may have a same length. The systems may include a plurality of output manifolds. Each of the output manifolds may be coupled with a respective processing region. The systems may include a plurality of valves. At least one valve may be coupled between each outlet and an output manifold.

公开(公告)号：US11862475B2

公开(公告)日：2024-01-02

申请号：US17071618

申请日：2020-10-15

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Diwakar Kedlaya ,  Amit Bansal ,  Venkata Sharat Chandra Parimi ,  Rajaram Narayanan ,  Badri N. Ramamurthi ,  Sherry L. Mings ,  Job George Konnoth Joseph ,  Rupankar Choudhury

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/3065 ,  H01J37/32623

Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

公开(公告)号：US11848178B2

公开(公告)日：2023-12-19

申请号：US17085058

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Diwakar Kedlaya

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32844 ,  H01J37/32357 ,  H01J37/32963 ,  H01L21/683

Abstract: Semiconductor processing systems and methods are disclosed. An exemplary semiconductor processing system may include a semiconductor processing chamber containing a solid boron deposit, a remote plasma unit disposed upstream of the semiconductor processing chamber, and an optical absorption sensor disposed downstream of the semiconductor processing chamber. The remote plasma unit may be configured to generate plasma effluents from a fluorine-containing precursor. The optical absorption sensor may be configured to measure within an outflow from the semiconductor processing chamber a level of a boron-containing compound produced via a reaction between at least a portion of the solid boron deposit and the plasma effluents flowed from the remote plasma unit into the semiconductor processing chamber.