公开(公告)号：US11942332B2

公开(公告)日：2024-03-26

申请号：US17887206

申请日：2022-08-12

Applicant: Applied Materials, Inc.

Inventor： Akhil Mehrotra ,  Gene S. Lee ,  Abhijit Patil ,  Shan Jiang ,  Zohreh Hesabi

IPC: H01L21/32 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/32137 ,  H01L21/28562 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US11127599B2

公开(公告)日：2021-09-21

申请号：US16245251

申请日：2019-01-10

Applicant: Applied Materials, Inc.

Inventor： Shan Jiang ,  Gene Lee ,  Akhil Mehrotra ,  Zohreh Hesabi

IPC: H01L21/311 ,  H01J37/32

Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.

公开(公告)号：US10957558B2

公开(公告)日：2021-03-23

申请号：US16828751

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Akhil Mehrotra ,  Gene Lee ,  Abhijit Patil ,  Shan Jiang ,  Zohreh Hesabi

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US11417537B2

公开(公告)日：2022-08-16

申请号：US17197757

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Akhil Mehrotra ,  Gene S. Lee ,  Abhijit Patil ,  Shan Jiang ,  Zohreh Hesabi

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.