公开(公告)号：US20140374509A1

公开(公告)日：2014-12-25

申请号：US14480799

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Stanley DETMAR ,  Brian T. WEST ,  Ronald Vern SCHAUER

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

Abstract translation: 本发明的实施例通常提供等离子体蚀刻处理室的改进。 提供改进的气体注入喷嘴，用于在室的盖的中心位置。 气体注入喷嘴可以用于现有的等离子体蚀刻室，并且被配置为提供跨过位于腔室内的衬底的表面的一系列圆锥气流。 在一个实施例中，提供了一种用于等离子体蚀刻室中的改进的排气套件。 排气套件包括可用于现有等离子体蚀刻室中并且被配置为提供来自腔室的处理区域的排气的环形流的装置。