PLASMA SPRAYED DEPOSITION RING ISOLATOR
    1.
    发明申请
    PLASMA SPRAYED DEPOSITION RING ISOLATOR 审中-公开
    等离子喷涂沉积环分离器

    公开(公告)号:US20140102369A1

    公开(公告)日:2014-04-17

    申请号:US14103621

    申请日:2013-12-11

    Inventor: Brian T. WEST

    Abstract: A substrate processing chamber component including a deposition ring for protecting exposed portions of a substrate support pedestal, wherein the deposition ring includes a metal portion and a ceramic isolator portion. The ceramic isolator portion may be a plasma coated ceramic isolator coating, and the metal portion may be made of stainless steel. The ceramic isolator portion may be made of a ceramic such as alumina, yttria, aluminum nitride, titania, zirconia, and combinations thereof.

    Abstract translation: 一种基板处理室部件,包括用于保护基板支撑基座的暴露部分的沉积环,其中所述沉积环包括金属部分和陶瓷隔离部分。 陶瓷隔离器部分可以是等离子体涂覆的陶瓷隔离器涂层,并且金属部分可以由不锈钢制成。 陶瓷隔离器部分可以由诸如氧化铝,氧化钇,氮化铝,二氧化钛,氧化锆的陶瓷制成,以及它们的组合。

    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

    公开(公告)号:US20200294778A1

    公开(公告)日:2020-09-17

    申请号:US16890573

    申请日:2020-06-02

    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

    PRE-CONDITIONED CHAMBER COMPONENTS
    3.
    发明申请

    公开(公告)号:US20200024725A1

    公开(公告)日:2020-01-23

    申请号:US16456769

    申请日:2019-06-28

    Abstract: Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.

    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

    公开(公告)号:US20180342378A1

    公开(公告)日:2018-11-29

    申请号:US16048919

    申请日:2018-07-30

    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

    LOW TEMPERATURE BIASABLE SUBSTRATE SUPPORT
    5.
    发明申请

    公开(公告)号:US20200350195A1

    公开(公告)日:2020-11-05

    申请号:US16447518

    申请日:2019-06-20

    Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.

    HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE
    7.
    发明申请
    HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE 有权
    霍尔效应增强了电容耦合等离子体源

    公开(公告)号:US20150255251A1

    公开(公告)日:2015-09-10

    申请号:US14199974

    申请日:2014-03-06

    Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

    Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间,外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中,产生致密等离子体。

    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES
    8.
    发明申请
    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES 有权
    具有背面冷却槽的喷射目标

    公开(公告)号:US20150047975A1

    公开(公告)日:2015-02-19

    申请号:US14456014

    申请日:2014-08-11

    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

    Abstract translation: 本公开的实施例涉及用于处理衬底的溅射室的溅射靶。 在一个实施方案中,提供了用于溅射室的溅射靶。 溅射靶包括具有径向内部,中部和外部区域的背面的溅射板和安装到溅射板的环形背板。 背面具有多个彼此间隔开的圆形槽,以及至少一个弧形通道,其切割圆形槽并且从径向内部区域延伸到溅射板的径向外部区域。 环形背板限定了暴露溅射板的背面的敞开的环状空间。

    AUTOMATED TEMPERATURE CONTROLLED SUBSTRATE SUPPORT

    公开(公告)号:US20220389566A1

    公开(公告)日:2022-12-08

    申请号:US17337528

    申请日:2021-06-03

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Patent Agency Ranking