公开(公告)号：US20180040476A1

公开(公告)日：2018-02-08

申请号：US15674108

申请日：2017-08-10

Applicant: Applied Materials, Inc.

Inventor： Steven WOLF ,  Mary EDMONDS ,  Andrewe KUMMEL ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/34 ,  H01L29/51 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/342 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/0228 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.