公开(公告)号：US20190393024A1

公开(公告)日：2019-12-26

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Chentsau YING ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20180358244A1

公开(公告)日：2018-12-13

申请号：US16107845

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC: H01L21/67 ,  H01L21/683 ,  C23C16/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US20180342395A1

公开(公告)日：2018-11-29

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas NEMANI ,  Ellie YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US20200368666A1

公开(公告)日：2020-11-26

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20180040476A1

公开(公告)日：2018-02-08

申请号：US15674108

申请日：2017-08-10

Applicant: Applied Materials, Inc.

Inventor： Steven WOLF ,  Mary EDMONDS ,  Andrewe KUMMEL ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/34 ,  H01L29/51 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/342 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/0228 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.

公开(公告)号：US20170229325A1

公开(公告)日：2017-08-10

申请号：US15495832

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US20140187035A1

公开(公告)日：2014-07-03

申请号：US14142124

申请日：2013-12-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  APPLIED MATERIALS, Inc. ,  CNRS Centre National de la Recherche Scientifique

Inventor： Nicolas POSSEME ,  Sebastien BARNOLA ,  Olivier JOUBERT ,  Srinivas NEMANI ,  Laurent VALLIER

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

Abstract: The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.

Abstract translation: 本发明涉及一种蚀刻多孔电介质材料层的方法，其特征在于，在由与氧（O 2）和/或氮（N 2）混合的至少一种硅基气体形成的等离子体中进行蚀刻，以便 沿着所述蚀刻，至少在多孔介电材料层的侧面上生长钝化层，并且其中硅基气体取自x / y等于或大于0.3的所有类型SixHy的化合物 或取自以下类型的所有化合物：SixFy和SixCly，其中x是气体中硅（Si）的比例，y是氟（F）或氯（Cl）或氢（H）的比例 气体。

公开(公告)号：US20200038797A1

公开(公告)日：2020-02-06

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/673 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20190371650A1

公开(公告)日：2019-12-05

申请号：US16407510

申请日：2019-05-09

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Keith Tatseun WONG ,  Kurtis LESCHKIES ,  Namsung KIM ,  Srinivas NEMANI

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/324

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.

公开(公告)号：US20150042017A1

公开(公告)日：2015-02-12

申请号：US14063860

申请日：2013-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik RAMASWAMY ,  Troy DETRICK ,  Srinivas NEMANI ,  Ajey JOSHI

IPC: B28B1/00 ,  C23C26/02

CPC classification number: B28B1/001 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2999/00 ,  C23C16/513 ,  C23C26/02 ,  Y02P10/295 ,  B22F2202/13

Abstract: Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.

Abstract translation: 实施例包括三维等离子体印刷或处理的系统，装置和方法。 在一个实施例中，一种方法包括将化学前体引入一个或多个点等离子体源中，在具有一个或多个电源的化学前体的一个或多个点等离子体源中产生等离子体，以及将设置在舞台上的衬底 通过相对于一个或多个点等离子体源移动台来产生等离子体。