公开(公告)号：US20040248404A1

公开(公告)日：2004-12-09

申请号：US10780105

申请日：2004-02-17

Applicant: Applied Materials, Inc.

Inventor： Suchitra Subrahmanyan ,  Liang-Yuh Chen ,  Roderick Craig Mosely

IPC: H01L021/4763

CPC classification number: C23C16/0236 ,  C23C14/022 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76861 ,  Y10S438/906

Abstract: The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

Abstract translation: 本发明通常在金属化之前提供在衬底上的亚微米特征的预清洗工艺。 该方法包括用来自诸如氧的反应性气体的等离子体，CF 4 / O 2或He / NF 3的混合物的混合物的自由基清洗亚微米特征，其中等离子体优选由远程等离子体源产生，并且基团是 输送到其中设置基板的室。 残留在亚微米特征中的天然氧化物优选通过用含有氢的等离子体进行处理而在第二步骤中还原。 在第一或两个预清洗步骤之后，特征可以通过可用的金属化技术用金属填充，其通常包括在沉积铝，铜或钨之前在暴露的电介质表面上沉积阻挡层/衬垫层。 预清洗和金属化步骤可以在可用的集成处理平台上进行。