公开(公告)号：US20180061978A1

公开(公告)日：2018-03-01

申请号：US15804691

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Naomi YOSHIDA ,  Theresa Kramer GUARINI ,  Sung Won JUN ,  Vanessa PENA ,  Errol Antonio C. SANCHEZ ,  Benjamin COLOMBEAU ,  Michael CHUDZIK ,  Bingxi Sun WOOD ,  Nam Sung KIM

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78642

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

公开(公告)号：US20160336405A1

公开(公告)日：2016-11-17

申请号：US15152273

申请日：2016-05-11

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Naomi YOSHIDA ,  Theresa Kramer GUARINI ,  Sung Won JUN ,  Vanessa PENA ,  Errol Antonio C. SANCHEZ ,  Benjamin COLOMBEAU ,  Michael CHUDZIK ,  Bingxi WOOD ,  Nam Sung KIM

IPC: H01L29/15 ,  H01L29/423 ,  H01L29/06 ,  H01L29/49 ,  H01L29/45 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78642

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Abstract translation: 本文描述的实施例通常涉及用于水平门全周（hGAA）隔离和鳍场效应晶体管（FinFET）隔离的方法和器件结构。 可以在衬底上形成包括布置在交替堆叠的层中的不同材料的超晶格结构。 在一个实施例中，超晶格结构的至少一个层可以被氧化以形成邻近衬底的掩埋氧化物层。

公开(公告)号：US20200035822A1

公开(公告)日：2020-01-30

申请号：US16592362

申请日：2019-10-03

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Naomi YOSHIDA ,  Theresa Kramer GUARINI ,  Sung Won JUN ,  Vanessa PENA ,  Errol Antonio C. SANCHEZ ,  Benjamin COLOMBEAU ,  Michael CHUDZIK ,  Bingxi WOOD ,  Nam Sung KIM

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/10

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

公开(公告)号：US20170018624A1

公开(公告)日：2017-01-19

申请号：US15279257

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Naomi YOSHIDA ,  Theresa Kramer GUARINI ,  Sung Won JUN ,  Benjamin COLOMBEAU ,  Michael CHUDZIK

IPC: H01L29/423 ,  H01L21/306 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L29/42392 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/15 ,  H01L29/157 ,  H01L29/158 ,  H01L29/66742 ,  H01L29/78696

Abstract: Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Abstract translation: 本文描述的实施例通常涉及用于水平门全周（hGAA）隔离的方法和装置。 可以在衬底上形成包括布置在交替堆叠的层中的不同材料的超晶格结构。 不同的材料可以是含硅材料和一种或多种III / V材料。 在一个实施例中，超晶格结构的至少一个层可以被氧化以形成邻近衬底的掩埋氧化物层。