公开(公告)号：US20240404835A1

公开(公告)日：2024-12-05

申请号：US18804929

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Leonard M. TEDESCHI ,  Kartik RAMASWAMY ,  Benjamin CE SCHWARZ ,  Changgong WANG ,  Vahid FIROUZDOR ,  Sumanth BANDA ,  Teng-Fang KUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20160293384A1

公开(公告)日：2016-10-06

申请号：US14698556

申请日：2015-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Chun YAN ,  Jim Zhongyi HE ,  Xinyu BAO ,  Teng-Fang KUO ,  Zhenwen DING ,  Adam LANE

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02538 ,  H01L21/02661

Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

Abstract translation: 本文提供了从设置在基板处理系统中的表面去除污染物的方法。 在一些实施例中，用于从表面去除污染物的方法包括：向具有设置在处理室内的表面的处理室提供包含含氯气体，含氢气体和惰性气体的第一工艺气体; 点燃第一工艺气体以形成来自第一工艺气体的等离子体; 并将表面暴露于等离子体以从表面去除污染物。 在一些实施例中，表面是处理室部件的暴露表面。 在一些实施例中，表面是设置在诸如半导体晶片的衬底上的第一层的表面。