公开(公告)号：US20160293384A1

公开(公告)日：2016-10-06

申请号：US14698556

申请日：2015-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Chun YAN ,  Jim Zhongyi HE ,  Xinyu BAO ,  Teng-Fang KUO ,  Zhenwen DING ,  Adam LANE

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02538 ,  H01L21/02661

Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

Abstract translation: 本文提供了从设置在基板处理系统中的表面去除污染物的方法。 在一些实施例中，用于从表面去除污染物的方法包括：向具有设置在处理室内的表面的处理室提供包含含氯气体，含氢气体和惰性气体的第一工艺气体; 点燃第一工艺气体以形成来自第一工艺气体的等离子体; 并将表面暴露于等离子体以从表面去除污染物。 在一些实施例中，表面是处理室部件的暴露表面。 在一些实施例中，表面是设置在诸如半导体晶片的衬底上的第一层的表面。

公开(公告)号：US20170178894A1

公开(公告)日：2017-06-22

申请号：US15375683

申请日：2016-12-12

Applicant: Applied Materials, Inc.

Inventor： Peter STONE ,  Christopher S. OLSEN ,  Teng-fang KUO ,  Ping Han HSIEH ,  Zhenwen DING

IPC: H01L21/02 ,  H01L21/322 ,  H01L21/3065

CPC classification number: H01L21/02057 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/3221 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

公开(公告)号：US20190067070A1

公开(公告)日：2019-02-28

申请号：US16105731

申请日：2018-08-20

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn BOYD, JR. ,  Jim Zhongyi HE ,  Zhenwen DING

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66

Abstract: Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.