公开(公告)号：US20180261454A9

公开(公告)日：2018-09-13

申请号：US15194361

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Zhiyuan YE ,  Jean-Baptiste PIN ,  Errol SANCHEZ ,  Franck BASSANI ,  Thierry BARON ,  Yann BOGUMILOWICZ ,  Jean-Michel HARTMANN

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/201 ,  H01L29/06

Abstract: A semiconductor device is disclosed that has a semiconductor substrate having a crystal structure with a plane and a plane and a surface that forms an angle of about 0.3 degrees to about 0.7 degrees with the plane in the direction of the plane; and a compound semiconductor layer formed on the semiconductor substrate. The compound semiconductor layer is free of antiphase boundaries, and has a thickness between about 200 nm and about 1,000 nm.

公开(公告)号：US20170004968A1

公开(公告)日：2017-01-05

申请号：US15194361

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Zhiyuan YE ,  Jean-Baptiste PIN ,  Errol SANCHEZ ,  Franck BASSANI ,  Thierry BARON ,  Yann BOGUMILOWICZ ,  Jean-Michel HARTMANN

IPC: H01L21/02 ,  H01L29/201 ,  H01L29/06 ,  H01L29/04

CPC classification number: H01L21/02433 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02694 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/201

Abstract: A semiconductor device is disclosed that has a semiconductor substrate having a crystal structure with a plane and a plane and a surface that forms an angle of about 0.3 degrees to about 0.7 degrees with the plane in the direction of the plane; and a compound semiconductor layer formed on the semiconductor substrate. The compound semiconductor layer is free of antiphase boundaries, and has a thickness between about 200 nm and about 1,000 nm.

Abstract translation: 公开了一种半导体器件，其具有半导体衬底，该半导体衬底具有具有<1,0,0>面和<1,1,0>平面的晶体结构，以及与大约0.3度至大约0.7度的角度形成的表面， <1,0,0>平面在<1,1,0>平面的方向; 以及形成在半导体衬底上的化合物半导体层。 化合物半导体层没有反相边界，并且具有在约200nm和约1000nm之间的厚度。