公开(公告)号：US20220199406A1

公开(公告)日：2022-06-23

申请号：US17534287

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Ruiying Hao ,  Wayne French ,  Kelvin Chan

IPC: H01L21/033 ,  H01J37/32 ,  G03F7/004 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

公开(公告)号：US20220197146A1

公开(公告)日：2022-06-23

申请号：US17464432

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Lauren Bagby ,  Stephen Weeks ,  Aaron Dangerfield ,  Lakmal Kalutarage ,  Jeffrey Anthis ,  Mark Saly ,  Regina Freed ,  Wayne French ,  Kelvin Chan

IPC: G03F7/16

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：US12282256B2

公开(公告)日：2025-04-22

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US20220155689A1

公开(公告)日：2022-05-19

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.