公开(公告)号：US20230420259A1

公开(公告)日：2023-12-28

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/3081

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20220197146A1

公开(公告)日：2022-06-23

申请号：US17464432

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Lauren Bagby ,  Stephen Weeks ,  Aaron Dangerfield ,  Lakmal Kalutarage ,  Jeffrey Anthis ,  Mark Saly ,  Regina Freed ,  Wayne French ,  Kelvin Chan

IPC: G03F7/16

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：US09812318B2

公开(公告)日：2017-11-07

申请号：US14801215

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US12261049B2

公开(公告)日：2025-03-25

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20170117144A1

公开(公告)日：2017-04-27

申请号：US15299708

申请日：2016-10-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Kalutarage ,  Mark Saly ,  David Thompson

IPC: H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02203

Abstract: Methods for modifying the properties of a porous film are described. An infiltrating material is deposited within the pores of the porous film.

公开(公告)号：US20170114465A1

公开(公告)日：2017-04-27

申请号：US15297262

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal Kalutarage ,  Mark Saly ,  David Thompson

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02 ,  C23C16/40

CPC classification number: C23C16/50 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J2237/3321 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/02348

Abstract: Provided are methods for depositing flowable films comprising SiO or SiN. Certain methods comprise exposing a substrate surface to a siloxane or silazane precursor; exposing the substrate surface to a plasma-activated co-reactant to provide a SiON intermediate film; UV curing the SiON intermediate film to provide a cured intermediate film; and annealing the cured intermediate film to provide a film comprising SiO or SiN.

公开(公告)号：US20160024647A1

公开(公告)日：2016-01-28

申请号：US14801215

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal Kalutarage

IPC: C23C16/22 ,  H01L21/02 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract translation: 通过使用多功能胺和含有反应性部分的含硅前体的分子层沉积来沉积SiCON膜的方法。