公开(公告)号：US11699570B1

公开(公告)日：2023-07-11

申请号：US17665970

申请日：2022-02-07

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Wei Zou ,  Hans-Joachim L. Gossmann ,  Qintao Zhang ,  Aseem Kumar Srivastava ,  William Robert Bogiages, Jr. ,  Wei Zhao

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

公开(公告)号：US12247283B2

公开(公告)日：2025-03-11

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: H01L29/06 ,  C23C14/48 ,  C23C14/54 ,  H01J37/304 ,  H01J37/317

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230016122A1

公开(公告)日：2023-01-19

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: C23C14/54 ,  H01J37/304 ,  C23C14/48 ,  H01J37/317 ,  H01L29/06

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.