公开(公告)号：US12247283B2

公开(公告)日：2025-03-11

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: H01L29/06 ,  C23C14/48 ,  C23C14/54 ,  H01J37/304 ,  H01J37/317

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230016122A1

公开(公告)日：2023-01-19

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: C23C14/54 ,  H01J37/304 ,  C23C14/48 ,  H01J37/317 ,  H01L29/06

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230013095A1

公开(公告)日：2023-01-19

申请号：US17375488

申请日：2021-07-14

Applicant: Applied Materials, Inc.

Inventor： Richard Allen Sprenkle ,  Richard White ,  Eric Donald Wilson ,  Shane Conley ,  Ana Samolov ,  Nilay A. Pradhan

IPC: H01J3/12 ,  G05B19/4155 ,  G06N20/00

Abstract: Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.