公开(公告)号：US20220189774A1

公开(公告)日：2022-06-16

申请号：US17266415

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Jun-Feng Lu ,  Ting Cai ,  Ma Ning ,  Weiye He ,  Jian Kang

IPC: H01L21/265 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/768

Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.

公开(公告)号：US11942324B2

公开(公告)日：2024-03-26

申请号：US17266415

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Jun-Feng Lu ,  Ting Cai ,  Ma Ning ,  Weiye He ,  Jian Kang

IPC: H01L21/265 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L21/26513 ,  H01L21/3065 ,  H01L21/3212 ,  H01L21/76859 ,  H01L21/76877

Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.