公开(公告)号：US20230369050A1

公开(公告)日：2023-11-16

申请号：US18013675

申请日：2020-08-21

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Rajesh Prasad ,  Jun-Feng Lu

IPC: H01L21/265 ,  H01L21/311

CPC classification number: H01L21/265 ,  H01L21/31116

Abstract: A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device. The method may further include performing an etch process to remove the masking layer from atop each of the plurality of fins, wherein the etch process does not remove the buried oxide layer.

公开(公告)号：US11942324B2

公开(公告)日：2024-03-26

申请号：US17266415

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Jun-Feng Lu ,  Ting Cai ,  Ma Ning ,  Weiye He ,  Jian Kang

IPC: H01L21/265 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L21/26513 ,  H01L21/3065 ,  H01L21/3212 ,  H01L21/76859 ,  H01L21/76877

Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.

公开(公告)号：US11201057B2

公开(公告)日：2021-12-14

申请号：US16512734

申请日：2019-07-16

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng Lu ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/302 ,  H01L21/02 ,  H01L21/322 ,  H01L21/3115 ,  H01L23/00

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US11875995B2

公开(公告)日：2024-01-16

申请号：US17522100

申请日：2021-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng Lu ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/302 ,  H01J37/317 ,  H01L21/322 ,  H01L21/3115 ,  H01L23/00 ,  H01L21/02

CPC classification number: H01L21/265 ,  H01L21/0217 ,  H01L21/02351 ,  H01L21/302 ,  H01L21/31155 ,  H01L21/322 ,  H01L23/562 ,  H01J37/3171

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US20220189774A1

公开(公告)日：2022-06-16

申请号：US17266415

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Jun-Feng Lu ,  Ting Cai ,  Ma Ning ,  Weiye He ,  Jian Kang

IPC: H01L21/265 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/768

Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.