公开(公告)号：US20240420950A1

公开(公告)日：2024-12-19

申请号：US18209732

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Xiang Ji ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Jingmei Liang

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.

公开(公告)号：US20240105499A1

公开(公告)日：2024-03-28

申请号：US17954565

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Xinke Wang ,  Xiang Ji ,  Praket Prakash Jha

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/7688

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.