公开(公告)号：US20240331975A1

公开(公告)日：2024-10-03

申请号：US18129285

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Shuchi Sunil Ojha ,  Soham Asrani ,  Praket Prakash Jha ,  Bhargav S. Citla ,  Jingmei Liang

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32146 ,  H01L21/02532 ,  H01L21/0262 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/332 ,  H01J2237/3343 ,  H01J2237/336

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.

公开(公告)号：US11967524B2

公开(公告)日：2024-04-23

申请号：US17089221

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallick ,  Shankar Venkataraman

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/76877 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/76802 ,  H10B41/27 ,  H10B43/27

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

公开(公告)号：US20240420950A1

公开(公告)日：2024-12-19

申请号：US18209732

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Xiang Ji ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Jingmei Liang

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.

公开(公告)号：US20210280451A1

公开(公告)日：2021-09-09

申请号：US16808688

申请日：2020-03-04

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Praket P. Jha ,  Jingmei Liang ,  Shuchi Sunil Ojha

IPC: H01L21/762 ,  H01L21/3105 ,  H01L21/02

Abstract: Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, UV cure for increasing film density, film conversion to silicon oxide at low temperature, and film densification by low temperature inductively coupled plasma (ICP) treatment (

公开(公告)号：US12230499B2

公开(公告)日：2025-02-18

申请号：US16892990

申请日：2020-06-04

Applicant: Applied Materials, Inc.

Inventor： Yong Sun ,  Jung Chan Lee ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Jingmei Liang

IPC: H01L21/02

Abstract: A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×1015 ions/cm2·sec and 1.37×1016 ions/cm2·sec.

公开(公告)号：US20230360924A1

公开(公告)日：2023-11-09

申请号：US17737311

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Rui Cheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32844 ,  H01J37/32522 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

公开(公告)号：US20210143058A1

公开(公告)日：2021-05-13

申请号：US17089221

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallik ,  Shankar Venkataraman

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3213

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.