公开(公告)号：US20210025056A1

公开(公告)日：2021-01-28

申请号：US16639449

申请日：2018-10-08

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Zheng John YE ,  Kwangduk Douglas LEE ,  Dong Hyung LEE ,  Vinay PRABHAKAR ,  Juan Carlos ROCHA-ALVAREZ ,  Xiaoquan MIN

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/50

Abstract: Embodiments of the disclosure relate to an improved electrostatic chuck for use in a processing chamber to fabricate semiconductor devices. In one embodiment, a processing chamber includes a chamber body having a processing volume defined therein and an electrostatic chuck disposed within the processing volume. The electrostatic chuck includes a support surface with a plurality of mesas located thereon, one or more electrodes disposed within the electrostatic chuck, and a seasoning layer deposited on the support surface over the plurality of mesas. The support surface is made from an aluminum containing material. The one or more electrodes are configured to form electrostatic charges to electrostatically secure a substrate to the support surface. The seasoning layer is configured to provide cushioning support to the substrate when the substrate is electrostatically secured to the support surface.

公开(公告)号：US20210327713A1

公开(公告)日：2021-10-21

申请号：US16853283

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan MIN ,  Lu XU ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01L21/033 ,  H01L21/02

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.

公开(公告)号：US20210082696A1

公开(公告)日：2021-03-18

申请号：US16971239

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan MIN ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Vinay K. PRABHAKAR

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02

Abstract: A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.

公开(公告)号：US20180330951A1

公开(公告)日：2018-11-15

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Jiarui WANG ,  Kwangduk Douglas LEE ,  Milind GADRE ,  Xiaoquan MIN ,  Paul CONNORS

IPC: H01L21/225 ,  G03F1/38

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.