公开(公告)号：US11572618B2

公开(公告)日：2023-02-07

申请号：US17003969

申请日：2020-08-26

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Xiaozhou Che ,  Yong Cao ,  Shane Lavan ,  Chunming Zhou

IPC分类号： C23C14/35 ,  H01L21/02 ,  C23C14/06 ,  H01J37/34 ,  H01J37/32

摘要： A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

公开(公告)号：US20200378000A1

公开(公告)日：2020-12-03

申请号：US16854893

申请日：2020-04-21

申请人： Applied Materials, Inc.

发明人： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC分类号： C23C16/448 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

摘要： One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US11505863B2

公开(公告)日：2022-11-22

申请号：US16854893

申请日：2020-04-21

申请人： Applied Materials, Inc.

发明人： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC分类号： C23C16/448 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C14/00 ,  C23C16/00

摘要： Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.