公开(公告)号：US20250125154A1

公开(公告)日：2025-04-17

申请号：US18485998

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Lala Zhu ,  Yimin Huang ,  Shi Che ,  Yi Jin ,  Dongqing Yang ,  Lakmal C. Kalutarage ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.

公开(公告)号：US20250112051A1

公开(公告)日：2025-04-03

申请号：US18375207

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Jiayin Huang ,  Zihui Li ,  Yi Jin ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01L21/02

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include providing a first etchant precursor to the processing region and contacting the substrate with the first etchant precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The methods may include providing a second etchant precursor to the processing region. The methods may include contacting the substrate with the second etchant precursor. The contacting may etch a portion of the layer of silicon-containing material.