公开(公告)号：US20240087910A1

公开(公告)日：2024-03-14

申请号：US17944540

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Lala Zhu ,  Shi Che ,  Dongqing Yang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/324

Abstract: A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.

公开(公告)号：US20250125154A1

公开(公告)日：2025-04-17

申请号：US18485998

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Lala Zhu ,  Yimin Huang ,  Shi Che ,  Yi Jin ,  Dongqing Yang ,  Lakmal C. Kalutarage ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.