公开(公告)号：US10381454B2

公开(公告)日：2019-08-13

申请号：US15411724

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Xuena Zhang ,  Dong-Kil Yim ,  Wenqing Dai ,  Harvey You ,  Tae Kyung Won ,  Hsiao-Lin Yang ,  Wan-Yu Lin ,  Yun-chu Tsai

IPC: H01L21/02 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L49/02 ,  G02F1/1362 ,  G02F1/1368

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.