中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

26 records (took 0.021 seconds)

    IMPROVED ADHESION LAYER IN FLEXIBLE COVERLENS
    1.
    发明申请
    IMPROVED ADHESION LAYER IN FLEXIBLE COVERLENS 有权

    公开(公告)号：US20250052928A1

    公开(公告)日：2025-02-13

    申请号：US18719540

    申请日：2021-12-20

    Applicant: Applied Materials, Inc.

    Inventor： Helinda Nominada ,  Harvey You ,  Han Nguyen ,  Tae Kyung Won ,  Seong Ho Yoo ,  Soo Young Choi

    IPC: G02B1/14

    Abstract: Exemplary flexible coverlenses and the methods of making them are described. The methods may include exposing a surface of a substrate layer to a surface treatment plasma to form a treated surface of the substrate layer. A silicon-containing adhesion layer may be deposited on the treated surface of the substrate layer. A silane-containing adhesion promoter may be incorporated on the silicon-containing adhesion layer. The method may also include forming a hardcoat layer on the silicon-containing adhesion layer, where the silane-containing adhesion promoter is bonded to both the hardcoat layer and the silicon-containing adhesion layer. The exemplary flexible coverlenses made by the present methods are less susceptable to folding fatigue along a bending or folding axis of the coverlens.

    Methods of tuning to improve plasma stability
    3.
    发明授权
    Methods of tuning to improve plasma stability 有权

    公开(公告)号：US11929236B2

    公开(公告)日：2024-03-12

    申请号：US17630878

    申请日：2019-08-28

    Applicant: Applied Materials, Inc.

    Inventor： Shouqian Shao ,  Jianhua Zhou ,  Tae Kyung Won

    IPC: H01J37/32 ,  C23C16/505

    CPC classification number: H01J37/32183 ,  C23C16/505 ,  H01J2237/327

    Abstract: Embodiments described herein relate to methods of tuning within semiconductor processes to improve plasma stability. In these embodiments, multiple matching networks are provided. Each of the matching networks couple a radio frequency (RF) source to one of multiple connection points located on an electrode. Based on tuning parameter information and physical geometry information, a controller determines a tuning sequence for the multiple matching networks. As such, some of the matching networks are tuned while the other matching networks are locked. Using multiple matching networks leads to a more uniform plasma within the process volume of the process chamber. Improved plasma uniformity leads to less substrate defects and better device performance. Additionally, in these embodiments, the ability to tune each of the matching networks in a sequence decreases or prevents interference from occurring between the matching networks.

    Thin-film encapsulation
    4.
    发明授权
    Thin-film encapsulation 有权

    公开(公告)号：US10991916B2

    公开(公告)日：2021-04-27

    申请号：US16042807

    申请日：2018-07-23

    Applicant: Applied Materials, Inc.

    Inventor： Tae Kyung Won ,  Soo Young Choi ,  Sanjay D. Yadav

    IPC: H01L51/56 ,  C23C16/34 ,  C23C16/505 ,  H01L51/52 ,  H01L27/32

    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm−3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm−3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

    Plasma uniformity control by gas diffuser hole design
    7.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权

    公开(公告)号：US10262837B2

    公开(公告)日：2019-04-16

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    Multilayer passivation or etch stop TFT
    8.
    发明授权
    Multilayer passivation or etch stop TFT 有权
    多层钝化或蚀刻停止TFT

    公开(公告)号：US09590113B2

    公开(公告)日：2017-03-07

    申请号：US14773209

    申请日：2014-03-04

    Applicant: Applied Materials, Inc.

    Inventor： Dong-kil Yim ,  Tae Kyung Won ,  Seon-Mee Cho ,  John M. White

    IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

    CPC classification number: H01L29/66969 ,  H01L21/467 ,  H01L29/24 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869

    Abstract: The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.

    Abstract translation: 本发明一般涉及TFT和TFT的制造方法。 对于背沟道蚀刻TFT或蚀刻停止TFT，用于钝化层或蚀刻停止层的多个层允许在较不致密的背沟道保护层上形成非常密集的覆盖层。 封盖层可以是足够密实的，从而存在很少的针孔，因此氢不能通过半导体层。 因此，含氢前体可以用于覆盖层沉积。

    Silicon nitride forming precursor control
    10.
    发明申请
    Silicon nitride forming precursor control 审中-公开

    公开(公告)号：US20200058497A1

    公开(公告)日：2020-02-20

    申请号：US15999206

    申请日：2018-08-20

    Applicant: Applied Materials, Inc

    Inventor： Tae Kyung Won ,  Soo Young Choi ,  Jinhyun Cho ,  Yi Cui ,  Gaku Furuta

    IPC: H01L21/02

    Abstract: Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited over large substrates. When the precursor gas or gas mixture in the chamber is energized by applying radio frequency (RF) power to the chamber, the RF current flowing through the plasma generates a standing wave effect (SWE) in an inter-electrode gap. SWEs become significant as substrate or electrode size approaches the RF wavelength. Process parameters, such as process power, process pressure, electrode spacing, and gas flow ratios all affect the SWE. These parameters can be altered in order to minimize the SWE problem and to achieve acceptable thickness and properties uniformities. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates, while achieving various plasma densities will act to reduce the SWE, creating greater plasma stability.

Patent Agency Ranking