-
公开(公告)号:US20230168139A1
公开(公告)日:2023-06-01
申请号:US17537807
申请日:2021-11-30
Applicant: Applied Materials, Inc.
Inventor: Sukti Chatterjee , David Masayuki Ishikawa , Yuriy V. Melnik , David A. Britz , Lance A. Scudder
IPC: G01L13/00
CPC classification number: G01L13/00 , B05B12/006
Abstract: Exemplary backpressure monitoring apparatuses may include a fluid supply source having a fluid port. The backpressure monitoring apparatuses may include a flow control mechanism fluidly coupled with the fluid port. The backpressure monitoring apparatuses may include a delivery tube fluidly coupled with the flow control mechanism and the fluid port. The backpressure monitoring apparatuses may include a pressure differential gauge fluidly coupled with the delivery tube. The pressure differential gauge may include an interface mechanism that is engageable with an outlet of a fluid flow device.
-
公开(公告)号:US11953390B2
公开(公告)日:2024-04-09
申请号:US17537807
申请日:2021-11-30
Applicant: Applied Materials, Inc.
Inventor: Sukti Chatterjee , David Masayuki Ishikawa , Yuriy V. Melnik , David A. Britz , Lance A. Scudder
CPC classification number: G01L13/00 , G01F1/34 , B05B12/006
Abstract: Exemplary backpressure monitoring apparatuses may include a fluid supply source having a fluid port. The backpressure monitoring apparatuses may include a flow control mechanism fluidly coupled with the fluid port. The backpressure monitoring apparatuses may include a delivery tube fluidly coupled with the flow control mechanism and the fluid port. The backpressure monitoring apparatuses may include a pressure differential gauge fluidly coupled with the delivery tube. The pressure differential gauge may include an interface mechanism that is engageable with an outlet of a fluid flow device.
-
公开(公告)号:US20220375723A1
公开(公告)日:2022-11-24
申请号:US17741228
申请日:2022-05-10
Applicant: Applied Materials, Inc.
Inventor: Lance A. Scudder , Sukti Chatterjee , David Masayuki Ishikawa , Yuriy V. Melnik , Vibhas Singh
IPC: H01J37/32 , C23C16/40 , C23C16/455
Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
-
公开(公告)号:US20220372620A1
公开(公告)日:2022-11-24
申请号:US17741252
申请日:2022-05-10
Applicant: Applied Materials, Inc.
Inventor: Lance A. Scudder , Sukti Chatterjee , David Masayuki Ishikawa , Yuriy V. Melnik , Vibhas Singh
Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
-
-
-